sot-23 transistor

SOT-23 TRANSISTOR - CDT9013-ME

SOT-23 TRANSISTOR

Overview

  • Collector-Emitter voltage rating
  • Collector-Base voltage rating
  • Emitter-Base voltage rating
  • DC current gain (hFE)
  • Transition frequency
Description
01 — TECHNICAL DATA

Specifications

Characteristic Symbol Test Condition / Rating Unit
Collector-Emitter Voltage VCEO Maximum 40 Vdc
Collector-Base Voltage VCB O Maximum 30 Vdc
Emitter-Base Voltage VEBO Maximum 5.0 Vdc
Collector Current – Continuous IC Maximum 500 mAdc
Base Current IB Maximum 50 mAdc
Collector Power Dissipation PC 300 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 ℃
Collector Cutoff Current ICB O VCB=35V, IE=0 ≤0.1 µA
Emitter Cutoff Current IEBO VEB=5V, IC=0 ≤0.1 µA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1.0 mA 30 Vdc
Collector-Base Breakdown Voltage V(BR)CBO IC=100 µA 40 Vdc
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 µA 5 Vdc
DC Current Gain (hFE 1) hFE VCE=1V, IC=100 mA 200 to 350
DC Current Gain (hFE 2) hFE VCE=6V, IC=400 mA ≥25
Collector-Emitter Saturation Voltage VCE(sat) IC=500 mA, IB=50 mA ≤0.6 V
Base-Emitter Voltage VBE VCE=1V, IC=100 mA 0.8 to 1.0 V
Transition Frequency fT VCE=6V, IC=20 mA 150 to 300 MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1 MHz 7.0 to 10 pF
02 — INTRODUCTION

Features

Features

  • SOT-23 transistor
  • Wide DC current gain
  • Low cutoff current characteristics
  • Low collector-emitter saturation
  • High transition frequency
03 — SOLUTIONS

Applications

CDT9013-ME SOT-23 transistor is suited for switching and amplification in low-power electronic circuits requiring wide DC current gain and fast signal response.