sot-23 transistor

SOT-23 TRANSISTOR - CDT9018-ME

SOT-23 TRANSISTOR

Overview

  • Collector-Emitter voltage rating
  • Collector-Base voltage rating
  • Emitter-Base voltage rating
  • DC current gain (hFE)
  • High transition frequency
Description
01 — TECHNICAL DATA

Specifications

Characteristic Symbol Test Condition / Rating Unit
Collector-Emitter Voltage VCEO Maximum 30 Vdc
Collector-Base Voltage VCBO Maximum 30 Vdc
Emitter-Base Voltage VEBO Maximum 5.0 Vdc
Collector Current – Continuous IC Maximum 50 mAdc
Base Current IB Maximum 50 mAdc
Collector Power Dissipation PC 300 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 ℃
Collector Cutoff Current ICB O VCB=20V, IE=0 ≤0.5 µA
Emitter Cutoff Current IEBO VEB=3V, IC=0 ≤0.5 µA
Collector-Base Breakdown Voltage V(BR)CBO IC=100 µA 30 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1.0 mA 19 V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 µA 4 V
DC Current Gain hFE VCE=5V, IC=1 mA 40 to 300
Collector-Emitter Saturation Voltage VCE(sat) IC=10 mA, IB=1 mA ≤0.6 V
Base-Emitter Voltage VBE IB=10 mA 1.0 V
Transition Frequency fT VCE=5V, IC=10 mA 600 to 1100 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 MHz 1.2 to 1.5 pF
02 — INTRODUCTION

Features

Features

  • SOT-23 transistor
  • Low cutoff current characteristics
  • Wide DC current gain range
  • Low saturation voltage
  • High transition frequency up to 1100 MHz
03 — SOLUTIONS

Applications

CDT9018-ME SOT-23 transistor is suitable for high-frequency switching and amplification in low-power electronic circuits requiring fast dynamic response and wide current gain.