sot-23 transistor
SOT-23 TRANSISTOR - CDT1623L6-ME
SOT-23 TRANSISTOR
Overview
- Collector-Emitter Voltage rating
- Collector-Base Voltage rating
- Emitter-Base Voltage rating
- High DC current gain
- Low saturation voltages
Description
01 — TECHNICAL DATA
Specifications
| Characteristic | Symbol | Test Condition / Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | Maximum | 50 Vdc |
| Collector-Base Voltage | VCBO | Maximum | 60 Vdc |
| Emitter-Base Voltage | VEBO | Maximum | 5.0 Vdc |
| Collector Current – Continuous | IC | Maximum | 100 mAdc |
| Base Current | IB | Maximum | 30 mAdc |
| Collector Power Dissipation | PC | 300 mW | |
| Junction and Storage Temperature | Tj, Tstg | -55 to +150 ℃ | |
| Emitter Cutoff Current | IEBO | VEB=5V, IC=0 | ≤0.1 µA |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=1.0 mA | 50 Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100 µA | 60 Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100 µA | 5 Vdc |
| DC Current Gain | hFE | VCE=6V, IC=1 mA | 200 to 400 |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100 mA, IB=10 mA | 0.15 to 0.3 V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=100 mA, IB=10 mA | 0.86 to 1.0 V |
| Base-Emitter Voltage | VBE | VCE=6.0V, IC=1 mA | 0.55 to 0.65 V |
| Transition Frequency | fT | VCE=6.0V, IC=10 mA | ≈250 MHz |
| Collector Output Capacitance | Cob | VCB=6V, IE=0, f=1 MHz | ≈3.0 pF |
02 — INTRODUCTION
Features
Features
- SOT-23 transistor
- High DC current gain
- Low collector-emitter saturation voltage
- Low base-emitter saturation voltage
- High transition frequency
03 — SOLUTIONS
Applications
CDT1623L6-ME SOT-23 transistor is suited for general-purpose switching and amplification in low-power electronic circuits, providing high current gain and fast frequency response.