sot-23 switching transistor
SOT-23 SWITCHING TRANSISTOR - CDS2907A-ME
SOT-23 SWITCHING TRANSISTOR
Overview
- Collector-Emitter Voltage Rating
- Collector-Base Voltage Rating
- DC Current Gain (hFE)
- Collector-Emitter Saturation Voltage
Description
01 — TECHNICAL DATA
Specifications
| Characteristic | Symbol | Test Condition / Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | Maximum | -60 Vdc |
| Collector-Base Voltage | VCBO | Maximum | -65 Vdc |
| Emitter-Base Voltage | VEBO | Maximum | -5 Vdc |
| Collector Current – Continuous | IC | Maximum | -600 mAdc |
| Total Device Dissipation (FR-5 Board) | PD | TA=25℃ | 225 mW |
| Thermal Resistance Junction-to-Ambient (FR-5) | RJA | 556 ℃/W | |
| Total Device Dissipation (Alumina Substrate) | PD | TA=25℃ | 300 mW |
| Thermal Resistance Junction-to-Ambient (Alumina) | RJA | 417 ℃/W | |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 ℃ | |
| Collector Cutoff Current | ICBO | VCB=-50Vdc | -0.01 µA |
| Collector Cutoff Current (High Temp) | ICBO | VCB=-50Vdc, IE=0, TA=125℃ | -10 µA |
| Collector Cutoff Current (EX) | ICEX | VCE=-30Vdc, IEB=-0.5Vdc | -50 µA |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-10 mAdc, IB=0 | -60 Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-10 µA, IE=0 | -60 Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-10 µA, IC=0 | -5 Vdc |
| DC Current Gain | hFE | Ic=-0.1 mAdc, VCE=-10Vdc | 75 |
| DC Current Gain | hFE | Ic=-1 mAdc, VCE=-10Vdc | 100 |
| DC Current Gain | hFE | Ic=-10 mAdc, VCE=-10Vdc | 100 |
| DC Current Gain | hFE | Ic=-150 mAdc, VCE=-10Vdc | 100 to 300 |
| DC Current Gain | hFE | Ic=-500 mAdc, VCE=-10Vdc | 50 |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-150 mAdc, IB=-15 mAdc | -0.4 Vdc |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500 mAdc, IB=-50 mAdc | -2.6 Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | Ic=-150 mAdc, IB=-15 mAdc | -1.3 Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | Ic=-500 mAdc, IB=-50 mAdc | -2.6 Vdc |
| Current-Gain-Bandwidth Product | fT | Ic=-50 mAdc, VCE=-20Vdc, f=100MHz | 200 MHz |
| Output Capacitance | Cobo | VCB=-10Vdc, IE=0, f=1.0MHz | 8.0 pF |
| Input Capacitance | Cibo | VEB=-2.0Vdc, IC=0, f=1.0MHz | 30 pF |
| Turn-On Time | ton | VCC=-30Vdc, IC=-150 mAdc, IB1=-15 mAdc | 45 µmhos |
| Delay Time | td | 10 dB | |
| Rise Time | tr | 40 nS | |
| Storage Time | ts | VCC=-6.0Vdc, IC=-150 mAdc, IB1=IB2=-15 mAdc | 80 nS |
| Fall Time | tf | 30 nS | |
| Turn-Off Time | toff | 100 nS |
02 — INTRODUCTION
Features
Features
- SOT-23 switching transistor
- High DC current gain across wide bias range
- Low saturation voltage characteristics
- Fast switching and storage times
- Compact surface mount package
03 — SOLUTIONS
Applications
Compact SOT-23 switching transistor CDS2907A-ME is suitable for general switching and amplification tasks in low-power electronic circuits, offering fast response and stable gain characteristics.