n-channel mosfet

SOT-23 MOSFET - CDL3401A-UE

SOT-23 N-CHANNEL MOSFET -30 V

Overview

  • SOT-23 surface mount MOSFET
  • N-channel enhancement mode
  • Drain-Source voltage -30 V
  • Continuous drain current -4.2 A
  • Low RDS(on) characteristics
Description
01 — TECHNICAL DATA

Specifications

Parameter Min Type Max Unit
Drain-Source Breakdown Voltage V(BR)DSS @ VGS=0 V, ID=-250 µA -30 V
Zero Gate Voltage Drain Current IDSS @ VDS=-24 V, VGS=0 V -1.0 µA
Gate-Body Leakage Current IGSS @ VGS=±12 V ±100 nA
Gate Threshold Voltage VGS(th) @ ID=-250 µA -0.60 -0.90 -1.3 V
Static Drain-Source On-State Resistance RDS(on) @ VGS=-10 V, ID=-4.2 A 50 70
Static Drain-Source On-State Resistance RDS(on) @ VGS=-4.5 V, ID=-4.0 A 60 80
Static Drain-Source On-State Resistance RDS(on) @ VGS=-2.5 V, ID=-4.0 A 82 120
Forward Transconductance gfs @ VDS=-5 V, ID=-5 A 7 S
Diode Forward On-Voltage VSD @ VGS=0 V, IS=-1 A 0.75 1.3 V
Turn-On Delay Time td(on) 2.64 ns
Turn-On Time tr 10 ns
Turn-Off Delay Time td(off) 52 ns
Turn-On Fall Time tf 16.2 ns
Input Capacitance Ciss @ VDS=-15 V, VGS=0 V, f=1.0 MHz 740 pF
Output Capacitance Coss 51 pF
Reverse Transfer Capacitance Crss 44 pF
Total Gate Charge QG @ VDS=-15 V, ID=-4 A, VGS=-4.5 V 7.4 nC
Gate-to-Source Charge QGS 1.3 nC
Gate-to-Drain Charge QGD 2.6 nC
Continuous Drain Current ID -4.2 A
Peak Drain Current IDM -16 A
Total Device Dissipation PD @ TA=25℃ 400 mW
Thermal Resistance RθJA 313 ℃/W
Junction / Storage Temperature TJ, Tstg -55 150
02 — INTRODUCTION

Features

Features

SOT-23 surface mount MOSFET
N-channel enhancement mode
Drain-source voltage -30 V
Continuous drain current -4.2 A
Low RDS(on) characteristics

03 — SOLUTIONS

Applications

SOT-23 N-channel MOSFET for low-voltage switching and efficient power management in compact surface mount circuits.