n-channel mosfet

SOT-23 MOSFET - CDL3400A-UE

SOT-23 N-CHANNEL MOSFET 30 V

Overview

  • SOT-23 surface mount MOSFET
  • N-channel enhancement mode
  • Drain-Source voltage 30 V
  • Continuous drain current 5.8 A
  • Low RDS(on) characteristics
Description
01 — TECHNICAL DATA

Specifications

Parameter Min Type Max Unit
Drain-Source Breakdown Voltage V(BR)DSS 30 V
Zero Gate Voltage Drain Current IDSS @ VDS=24 V, VGS=0 V 1.0 µA
Gate-Body Leakage Current IGSS @ VGS=±12 V ±100 nA
Gate Threshold Voltage VGS(th) @ ID=250 µA 0.70 0.95 1.2 V
Static Drain-Source On-State Resistance RDS(on) @ VGS=10 V, ID=5.8 A 22 35
Static Drain-Source On-State Resistance RDS(on) @ VGS=4.5 V, ID=5.0 A 25 40
Static Drain-Source On-State Resistance RDS(on) @ VGS=2.5 V, ID=4.0 A 37 52
Forward Transconductance gfs @ VDS=5 V, ID=5.0 A 8 S
Diode Forward On-Voltage VSD @ VGS=0 V, IS=5.0 A 1.2 V
Turn-On Delay Time td(on) 4.4 ns
Turn-On Time tr 28.2 ns
Turn-Off Delay Time td(off) 16.2 ns
Turn-On Fall Time tf 26 ns
Input Capacitance Ciss @ VDS=15 V, VGS=0 V, f=1 MHz 630 pF
Output Capacitance Coss 55 pF
Reverse Transfer Capacitance Crss 71 pF
Total Gate Charge QG @ VDS=10 V, ID=5 A, VGS=6 V 17.25 nC
Gate-to-Source Charge QGS 2.1 nC
Gate-to-Drain Charge QGD 2 nC
Continuous Drain Current ID 5.8 A
Peak Drain Current IDM 20 A
Total Device Dissipation PD @ TA=25℃ 450 mW
Thermal Resistance RθJA 278 ℃/W
Junction Temperature TJ -55 150
Storage Temperature Range Tstg -55 150
02 — INTRODUCTION

Features

Features

SOT-23 surface mount MOSFET
N-channel enhancement mode
30 V drain-source voltage rating
Continuous drain current 5.8 A
Low RDS(on) performance

03 — SOLUTIONS

Applications

SOT-23 N-channel MOSFET suitable for low-voltage switching, efficient power management and high-current handling in compact surface mount circuits.