n-channel mosfet
SOT-23 MOSFET - CDL2305-ME
SOT-23 N-CHANNEL MOSFET
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode device
- Drain-source voltage -12 V
- Continuous drain current -4.1 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Type | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS | -12 | – | – | V |
| Zero Gate Voltage Drain Current IDSS @ VDS=-8 V | – | – | -1.0 | µA |
| Gate-Body Leakage Current IGSS | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) @ ID=-250 µA | -0.50 | – | -1.0 | V |
| RDS(on) @ VGS=-4.5 V, ID=-3.5 A | – | 40 | 50 | mΩ |
| RDS(on) @ VGS=-2.5 V, ID=-3.0 A | – | 55 | 65 | mΩ |
| RDS(on) @ VGS=-1.8 V, ID=-2.0 A | – | 90 | 120 | mΩ |
| Forward Transconductance gfs | 6 | – | – | S |
| Diode Forward On-Voltage VSD | – | 0.75 | 1.3 | V |
| Input Capacitance Ciss @ VDS=-4 V | – | 740 | – | pF |
| Output Capacitance Coss | – | 290 | – | pF |
| Reverse Transfer Capacitance Crss | – | 190 | – | pF |
| Total Gate Charge QG @ VDS=-4 V, ID=-4.1 A | – | 4.5 | – | nC |
| Gate-to-Source Charge QGS | – | 1.2 | – | nC |
| Gate-to-Drain Charge QGD | – | 1.6 | – | nC |
| Turn-On Delay Time td(on) | – | 13 | 20 | ns |
| Turn-On Time tr | – | 35 | 53 | ns |
| Turn-Off Delay Time td(off) | – | 32 | 48 | ns |
| Turn-On Fall Time tf | – | 10 | 20 | ns |
| Continuous Drain Current ID | – | – | -4.1 | A |
| Peak Drain Current IDM | – | – | -16 | A |
| Total Device Dissipation PD @ TA=25℃ | – | – | 400 | mW |
| Thermal Resistance RθJA | – | – | 313 | ℃/W |
| Junction / Storage Temp TJ, Tstg | -55 | – | 150 | ℃ |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode device
Drain-source voltage -12 V
Continuous drain current -4.1 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET for low voltage switching and power management in compact surface mount circuits.