n-channel mosfet
SOT-23 MOSFET - CDL7002-ME
SOT-23 N-CHANNEL MOSFET 60 V
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode device
- Drain-Source voltage 60 V
- Gate-Source voltage ±20 V
- Continuous drain current 115 mA
- Low on-state resistance
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS @ VGS=0 V, ID=10 µA | 60 | 70 | – | V |
| Gate-Source Voltage VGSS | – | – | ±20 | V |
| Continuous Drain Current ID | – | – | 115 | mA |
| Peak Drain Current IDM | – | – | 800 | mA |
| Total Device Dissipation PD (FR-5 Board) | – | – | 200 | mW |
| Total Device Dissipation PD (Alumina Substrate) | – | – | 300 | mW |
| Junction / Storage Temperature TJ, Tstg | –55 | – | 150 | ℃ |
| Zero Gate Voltage Drain Current IDSS | – | – | 1.0 | µA |
| Gate-Body Leakage Current IGSSF @ VGS=20 V | – | – | 10 | nA |
| Gate-Body Leakage Current IGSSR @ VGS=-20 V | – | – | -10 | µA |
| Gate Threshold Voltage VGS(th) @ ID=250 µA | 1.35 | 1.6 | 1.85 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=10 V, ID=300 mA | – | – | 3 Ω | Ω |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=4.5 V, ID=200 mA | – | – | 4 Ω | Ω |
| Forward Transconductance gfs @ ID=200 mA | – | 80 | – | mS |
| Diode Forward On-Voltage VFSD @ IS=115 mA | – | – | 1.2 | V |
| Turn-On Delay Time td(on) | – | – | 10 | ns |
| Turn-Off Delay Time td(off) | – | – | 15 | ns |
| Input Capacitance Ciss @ VDS=25 V, VGS=0 V, f=1 MHz | – | – | 40 | pF |
| Output Capacitance Coss | – | – | 30 | pF |
| Reverse Transfer Capacitance Crss | – | – | 10 | pF |
| ESD HBM Rating | – | – | 2000 | V |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode device
Drain-Source voltage 60 V
Continuous drain current 115 mA
Low on-state resistance
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET designed for low-voltage switching and power control in compact surface mount circuits requiring moderate current handling and efficient switching.