NPN silicon epitaxial planar transistor
NPN Silicon Epitaxial Planar Transistor - MMBTA10
NPN SILICON EPITAXIAL PLANAR TRANSISTORS VHF/UHF
Overview
- VHF/UHF NPN transistor
- Plastic SOT-23 package
Description
01 — TECHNICAL DATA
Specifications
| Parameter | MMBTA10 | MMBTA11 | Unit |
|---|---|---|---|
| Collector Base Voltage VCBO | 30 | (empty) | V |
| Collector Emitter Voltage VCEO | 25 | (empty) | V |
| Emitter Base Voltage VEBO | 3 | (empty) | V |
| Collector Current IC | 100 | 100 | mA |
| Total Power Dissipation Ptot | 200 | 200 | mW |
| Operating Junction Temperature Tj | 150 | ℃ | |
| Storage Temperature Range Tstg | -55 to +150 | ℃ | |
| DC Current Gain hFE @ VCE=10 V, IC=4 mA | 60 | (empty) | (min) |
| Collector Base Breakdown Voltage V(BR)CBO @ IC=100 µA | 30 | (empty) | V |
| Collector Emitter Breakdown Voltage V(BR)CEO @ IC=1 mA | 25 | (empty) | V |
| Emitter Base Breakdown Voltage V(BR)EBO @ IE=10 µA | 3 | (empty) | V |
| Collector Cutoff Current ICBO @ VCB=25 V | 100 | 100 | nA |
| Collector Emitter Saturation Voltage VCE(sat) @ IC=4 mA, IB=0.4 mA | 0.5 | 0.5 | V |
| Base Emitter On Voltage VBE(on) @ VCE=10 V, IC=4 mA | 0.95 | 0.95 | V |
| Current Gain Bandwidth Product fT @ VCE=10 V, IC=4 mA, f=100 MHz | 650 | 650 | MHz |
| Collector Base Capacitance Ccb @ VCB=10 V, f=1 MHz | 0.7 | 0.7 | pF |
02 — INTRODUCTION
Features
Features
VHF/UHF NPN transistor
Plastic SOT-23 package
03 — SOLUTIONS
Applications
NPN silicon epitaxial planar transistor suited for VHF/UHF signal amplification and switching in compact surface mount electronic circuits.