silicon epitaxial planar switching diode

MMBD4148 Switching Diode - MMBD4148

FAST SWITCHING SILICON PLANAR DIODE

Overview

  • Surface mount switching diode
  • High speed switching performance
  • Low reverse leakage current
  • SMD package suitable for automated assembly
Description
01 — TECHNICAL DATA

Specifications

Parameter Value Unit
Maximum Repetitive Reverse Voltage VRRM 100 V
Reverse Voltage VR 75 V
Average Rectified Forward Current IF(AV) 200 mA
DC Forward Current IFM 600 mA
Recurrent Peak Forward Current IFRM 700 mA
Non-repetitive Peak Forward Surge Current IFSM @t=1 s 1 A
Non-repetitive Peak Forward Surge Current IFSM @t=1 μs 2 A
Total Device Dissipation Ptot 350 mW
Forward Voltage VF @ IF=10 mA ≤1.0 V
Reverse Breakdown Voltage V(BR)R @ IR=100 µA 100 V
Reverse Breakdown Voltage V(BR)R @ IR=5 µA 75 V
Reverse Current IR @ VR=20 V ≤25 nA
Reverse Current IR @ VR=75 V ≤5 µA
Reverse Current IR @ VR=20 V, Ta=150℃ ≤50 µA
Reverse Recovery Time trr @ IF=10 mA ≤4 ns
Total Capacitance CT @ VR=0 V, f=1 MHz ≤4 pF
Operating Junction Temp. Tj -55 to +150
Storage Temp. Range Tstg -55 to +150
02 — INTRODUCTION

Features

Features

Surface mount switching diode with fast switching performance.
Low leakage current and robust planar silicon construction.
Suitable for automated surface mount assembly.

03 — SOLUTIONS

Applications

SMD switching diode MMBD4148 for high-speed signal switching and general rectification tasks in consumer and industrial electronic circuits where fast recovery and low leakage are required.