silicon epitaxial planar switching diode

LS4148 Diode - LS4148

FAST SWITCHING QUADROMELF DIODE

Overview

  • Fast switching diode in QuadroMELF case especially suited for automatic surface mounting
  • Electrical equivalent to standard JEDEC 1N4148
  • Low reverse leakage current
  • High speed switching performance
Description
01 — TECHNICAL DATA

Specifications

Parameter Value Unit
Peak Reverse Voltage VRM 100 V
Reverse Voltage VR 75 V
Average Rectified Forward Current IF(AV) 200 mA
Forward Current IF 300 mA
Repetitive Peak Forward Current IFRM 500 mA
Non-repetitive Peak Forward Surge Current I(FSM) @1 ms 1 A
Non-repetitive Peak Forward Surge Current @1 μs 4 A
Power Dissipation Ptot 500 mW
Reverse Breakdown Voltage V(BR)R 100 V
Forward Voltage VF @ IF=10 mA ≤1 V
Reverse Leakage Current @ VR=20 V ≤25 nA
Reverse Leakage Current @ VR=75 V ≤5 µA
Capacitance Ctot @ VR=0, f=1 MHz ≤4 pF
Reverse Recovery Time trr ≤4 ns
Thermal Resistance RthA 0.35 ℃/mW
Operating Temp. Range -65 to +175
Storage Temp. Range -65 to +175
02 — INTRODUCTION

Features

Features

Fast switching diode in QuadroMELF case designed for automatic surface mounting.
Electrical characteristics equivalent to standard JEDEC 1N4148.
Low leakage and high speed switching performance.

03 — SOLUTIONS

Applications

Fast switching QuadroMELF diode LS4148 for high-speed signal switching and rectification in compact electronic modules and automated surface mount assembly environments.