silicon epitaxial planar switching diode

BAV21W Switching Diode - BAV21W

FAST SWITCHING SURFACE MOUNT DIODE

Overview

  • Fast switching surface mount diode
  • SOD-123 package suited for automatic insertion
  • High voltage blocking capability
  • Low reverse leakage current
Description
01 — TECHNICAL DATA

Specifications

Parameter BAV21W Unit
Repetitive Peak Reverse Voltage VRRM 250 V
Reverse Voltage VR 200 V
Average Rectified Forward Current IF(AV) 200 mA
Forward Continuous Current IFM 400 mA
Repetitive Peak Forward Current IFRM 625 mA
Non-repetitive Peak Forward Surge Current IFSM @ t=1 ms 2.5 A
Non-repetitive Peak Forward Surge Current @t=1 s 0.5 A
Power Dissipation Pd 250 mW
Forward Voltage VF @ IF=200 mA ≤1.25 V
Reverse Breakdown Voltage V(BR)R @ IR=100 µA 250 V
Reverse Current IR @ VR=200 V ≤100 nA
Total Capacitance CT @ VR=0 V, f=1 MHz 5 pF
Reverse Recovery Time trr @ IF=IR=30 mA 50 ns
Operating/Storage Temp. Range -65 to +150
02 — INTRODUCTION

Features

Features

Fast switching surface mount diode in SOD-123 package.
High voltage blocking capability with low leakage current.
Designed for automatic insertion and general switching applications.

03 — SOLUTIONS

Applications

Surface mount switching diode BAV21W for high-speed signal switching and general-purpose rectification in electronic and industrial circuits requiring high reverse voltage and low leakage performance.