silicon epitaxial planar switching diode
1N4148 Diode - 1N4148
HIGH-SPEED SWITCHING SILICON PLANAR DIODE
Overview
- High-speed switching diode
- Glass DO-35 package
- Low reverse leakage current
- Fast reverse recovery time
- High-speed switching diode
- Glass DO-35 package
- Low reverse leakage current
- Fast reverse recovery time
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Reverse Voltage VRM | 100 | V |
| Reverse Voltage VR | 75 | V |
| Average Rectified Forward Current IF(AV) | 200 | mA |
| Non-repetitive Peak Forward Surge Current IFSM (1μs) | 4 | A |
| Power Dissipation Ptot | 500 | mW |
| Junction Temperature Tj | 200 | ℃ |
| Forward Voltage VF @ IF = 10 mA | ≤1.0 | V |
| Leakage Current IR @ VR=20 V | ≤25 | nA |
| Leakage Current IR @ VR=75 V | ≤5 | µA |
| Leakage Current IR @ VR=20 V, Tj=150℃ | ≤50 | µA |
| Reverse Breakdown Voltage V(BR)R @ IR=100 µA | 100 | V |
| Reverse Breakdown Voltage V(BR)R @ IR=5 µA | 75 | V |
| Total Capacitance Ctot @ VR=0, f=1 MHz | ≤4 | pF |
| Reverse Recovery Time trr @ IF=10 mA | ≤4 | ns |
| Thermal Resistance Junction to Ambient RthA | ≤0.35 | K/mW |
02 — INTRODUCTION
Features
Features
High-speed switching silicon epitaxial planar diode.
Glass DO-35 package with low leakage current.
Fast reverse recovery and robust electrical characteristics.
03 — SOLUTIONS
Applications
High-speed silicon switching diode 1N4148 for signal switching, high frequency rectification and fast logic applications in consumer and industrial electronic circuits.