sot-23 transistor

SOT-23 TRANSISTOR - CDT9015-ME

SOT-23 TRANSISTOR

Overview

  • Collector-Emitter voltage rating
  • Collector-Base voltage rating
  • Emitter-Base voltage rating
  • DC current gain (hFE)
  • Transition frequency
Description
01 — TECHNICAL DATA

Specifications

Characteristic Symbol Test Condition / Rating Unit
Collector-Emitter Voltage VCEO Maximum -45 Vdc
Collector-Base Voltage VCBO Maximum -50 Vdc
Emitter-Base Voltage VEBO Maximum -5.0 Vdc
Collector Current – Continuous IC Maximum -150 mAdc
Base Current IB Maximum -30 mAdc
Collector Power Dissipation PC 300 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 ℃
Collector Cutoff Current ICB O VCB=-50V, IE=0 ≤-0.1 µA
Emitter Cutoff Current IEBO VEB=-5V, IC=0 ≤-0.1 µA
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 µA -50 Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1.0 mA -45 Vdc
Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 µA -5 Vdc
DC Current Gain hFE VCE=-6V, IC=-2 mA 200 to 450
Collector-Emitter Saturation Voltage VCE(sat) IC=-100 mA, IB=-5 mA ≤0.6 V
Base-Emitter Voltage VBE VCE=-5.0V, IC=-10 mA -0.82 V
Transition Frequency fT VCE=-5.0V, IC=-10 mA 100 to 200 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 MHz 4.0 to 7.0 pF
02 — INTRODUCTION

Features

Features

  • SOT-23 transistor
  • Wide DC current gain range
  • Low cutoff current characteristics
  • Low saturation voltage
  • High transition frequency response
03 — SOLUTIONS

Applications

CDT9015-ME SOT-23 transistor is suitable for switching and amplification in low-power electronic circuits requiring wide DC current gain and fast frequency response.