sot-23 transistor

SOT-23 TRANSISTOR - CDT9014-ME

SOT-23 TRANSISTOR

Overview

  • Collector-Emitter voltage rating
  • Collector-Base voltage rating
  • Emitter-Base voltage rating
  • DC current gain (hFE)
  • Transition frequency
Description
01 — TECHNICAL DATA

Specifications

Characteristic Symbol Test Condition / Rating Unit
Collector-Emitter Voltage VCEO Maximum 50 Vdc
Collector-Base Voltage VCB O Maximum 45 Vdc
Emitter-Base Voltage VEBO Maximum 5.0 Vdc
Collector Current – Continuous IC Maximum 150 mAdc
Base Current IB Maximum 30 mAdc
Collector Power Dissipation PC 300 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 ℃
Collector Cutoff Current ICB O VCB=50V, IE=0 ≤0.1 µA
Emitter Cutoff Current IEBO VEB=5V, IC=0 ≤0.1 µA
Collector-Base Breakdown Voltage V(BR)CBO IC=100 µA 50 Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1.0 mA 45 Vdc
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 µA 5 Vdc
DC Current Gain hFE VCE=6V, IC=2 mA 200 to 450
Collector-Emitter Saturation Voltage VCE(sat) IC=100 mA, IB=5 mA ≤0.6 V
Base-Emitter Voltage VBE VCE=5.0V, IC=10 mA 0.82 V
Transition Frequency fT VCE=5.0V, IC=10 mA 100 to 180 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 MHz 4.0 to 7.0 pF
02 — INTRODUCTION

Features

Features

  • SOT-23 transistor
  • Wide DC current gain up to 450
  • Low cutoff current characteristics
  • Low saturation voltage
  • High transition frequency response
03 — SOLUTIONS

Applications

CDT9014-ME SOT-23 transistor is suitable for switching and amplification in low-power electronic circuits requiring high current gain and fast dynamic response.