sot-23 transistor

SOT-23 TRANSISTOR - CDT9012-ME

SOT-23 TRANSISTOR

Overview

  • Collector-Emitter voltage rating
  • Collector-Base voltage rating
  • Emitter-Base voltage rating
  • DC current gain (hFE)
  • Transition frequency
Description
01 — TECHNICAL DATA

Specifications

Characteristic Symbol Test Condition / Rating Unit
Collector-Emitter Voltage VCEO Maximum -40 Vdc
Collector-Base Voltage VCBO Maximum -30 Vdc
Emitter-Base Voltage VEBO Maximum -5.0 Vdc
Collector Current – Continuous IC Maximum -500 mAdc
Base Current IB Maximum -50 mAdc
Collector Power Dissipation PC 300 mW
Junction and Storage Temperature Tj, Tstg -55 to +150 ℃
Collector Cutoff Current ICB O VCB=-35V, IE=0 ≤-0.1 µA
Emitter Cutoff Current IEBO VEB=-5V, IC=0 ≤-0.1 µA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1.0 mA -30 Vdc
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 µA -40 Vdc
Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 µA -5 Vdc
DC Current Gain hFE(1) hFE VCE=-1V, IC=-100 mA 200 to 350
DC Current Gain hFE(2) hFE VCE=-6V, IC=-400 mA ≥25
Collector-Emitter Saturation Voltage VCE(sat) IC=-500 mA, IB=-50 mA ≤-0.6 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100 mA -0.8 to -1.0 V
Transition Frequency fT VCE=-6V, IC=-20 mA 150 to 200 MHz
Collector Output Capacitance Cob VCB=-6V, IE=0, f=1 MHz 13 pF
02 — INTRODUCTION

Features

Features

  • SOT-23 transistor
  • Wide DC current gain range
  • Low cutoff currents
  • Low saturation voltage
  • High transition frequency
03 — SOLUTIONS

Applications

CDT9012-ME SOT-23 transistor is suitable for general switching and amplification in low-power electronic circuits requiring wide DC current gain and fast frequency response