sot-23 transistor
SOT-23 TRANSISTOR - CDT8550Y-ME
SOT-23 TRANSISTOR
Overview
- Collector-Emitter voltage rating
- Collector-Base voltage rating
- Emitter-Base voltage rating
- DC current gain (hFE)
- Transition frequency
Description
01 — TECHNICAL DATA
Specifications
| Characteristic | Symbol | Test Condition / Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | Maximum | -25 Vdc |
| Collector-Base Voltage | VCBO | Maximum | -40 Vdc |
| Emitter-Base Voltage | VEBO | Maximum | -5.0 Vdc |
| Collector Current – Continuous | IC | Maximum | -1500 mAdc |
| Collector Power Dissipation | PC | 300 mW | |
| Junction and Storage Temperature | Tj, Tstg | -55 to +150 ℃ | |
| Collector Cutoff Current | ICB O | VCB=-30V, IE=0 | ≤-0.1 µA |
| Collector-Emitter Cutoff Current | ICEO | VCB=-20V, IE=0 | ≤-0.1 µA |
| Emitter Cutoff Current | IEBO | VEB=-5V, IC=0 | ≤-0.1 µA |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-10 mA | -25 Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100 µA | -40 Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-100 µA | -5 Vdc |
| DC Current Gain | hFE | VCE=-1V, IC=-100 mA | 200 to 350 |
| DC Current Gain | hFE | VCE=-1V, IC=-1.2 A | 40 |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-1.2 A, IB=-120 mA | ≤-0.6 V |
| Base-Emitter Voltage | VBE | VCE=-1V, IC=-10 mA | -0.8 to -1.2 V |
| Transition Frequency | fT | VCE=-5V, IC=-10 mA | ≈120 MHz |
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1 MHz | 13 to 30 pF |
02 — INTRODUCTION
Features
Features
- SOT-23 transistor
- Moderate DC current gain
- High voltage tolerance up to -40 V
- Low cutoff currents
- Fast frequency response
03 — SOLUTIONS
Applications
CDT8550-ME-Sn SOT-23 transistor is suitable for low-voltage switching and general amplification in compact electronic circuits requiring moderate current gain and fast frequency response.