sot-23 transistor
SOT-23 TRANSISTOR - CDT8050-ME-Sn
SOT-23 TRANSISTOR
Overview
- Collector-Emitter Voltage rating
- Collector-Base Voltage rating
- Emitter-Base Voltage rating
- High DC current gain
- Fast switching performance
Description
01 — TECHNICAL DATA
Specifications
| Characteristic | Symbol | Test Condition / Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | Maximum | 25 Vdc |
| Collector-Base Voltage | VCBO | Maximum | 40 Vdc |
| Emitter-Base Voltage | VEBO | Maximum | 5.0 Vdc |
| Collector Current – Continuous | IC | Maximum | 1500 mAdc |
| Base Current | IB | Maximum | 160 mAdc |
| Collector Power Dissipation | PC | 300 mW | |
| Junction and Storage Temperature | Tj, Tstg | -55 to +150 ℃ | |
| Collector Cutoff Current | ICBO | VCB=30V, IE=0 | ≤0.1 µA |
| Collector-Emitter Cutoff Current | ICEO | VCB=20V, IE=0 | ≤0.1 µA |
| Emitter Cutoff Current | IEBO | VEB=5V, IC=0 | ≤0.1 µA |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10 mA | 25 V |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100 µA | 40 V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100 µA | 5 V |
| DC Current Gain (hFE) | hFE | VCE=1V, IC=100 mA | 200 to 350 |
| DC Current Gain (hFE) | hFE | VCE=1V, IC=1.5 A | 40 |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=1200 mA, IB=120 mA | ≤0.6 V |
| Base-Emitter Voltage | VBE | VCE=1V, IC=10 mA | 0.8 to 1.2 V |
| Transition Frequency | fT | VCE=5V, IC=10 mA | ≈120 MHz |
| Collector Output Capacitance | Cob | VCB=10V, IE=0, f=1 MHz | 13 to 30 pF |
02 — INTRODUCTION
Features
Features
- SOT-23 transistor
- High DC current gain at moderate bias
- Low cutoff currents
- Fast transition frequency
- Compact package SOT-23
03 — SOLUTIONS
Applications
CDT8050-ME-Sn SOT-23 transistor is designed for low-voltage switching and amplification in compact electronic circuits, providing high current gain and efficient performance.