sot-23 transistor
SOT-23 TRANSISTOR - CDT5551-ME
SOT-23 HIGH VOLTAGE TRANSISTOR
Overview
- Collector-Emitter Voltage rating
- Collector-Base Voltage rating
- Emitter-Base Voltage rating
- High DC current gain
- Fast switching performance
Description
01 — TECHNICAL DATA
Specifications
| Characteristic | Symbol | Test Condition / Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | Maximum | -150 Vdc |
| Collector-Base Voltage | VCBO | Maximum | -160 Vdc |
| Emitter-Base Voltage | VEBO | Maximum | -5 Vdc |
| Collector Current – Continuous | IC | Maximum | -500 mAdc |
| Total Power Dissipation | PD | Ta=25℃ | 225 mW |
| Junction and Storage Temperature | Tj, Tstg | -65 to +150 ℃ | |
| Thermal Resistance Junction-to-Ambient | Rth j-a | 556 ℃/W | |
| Collector Cut-Off Current | ICBO | VCB=-120Vdc, IE=0 | ≤50 nA |
| Emitter Cut-Off Current | IEBO | VEB=-4.0Vdc, IC=0 | ≤50 nA |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-1.0 mAdc, IB=0 | -150 Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100 µA, IE=0 | -160 Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-10 µA, IC=0 | -5 Vdc |
| DC Current Gain | hFE | IC=-5 mAdc, VCE=-10 Vdc | 100 to 300 |
| DC Current Gain | hFE | IC=-50 mAdc, VCE=-10 Vdc | 50 |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-50 mAdc, IB=-5.0 mAdc | ≤0.5 Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-50 mAdc, IB=-5.0 mAdc | ≤1.0 Vdc |
| Transition Frequency | fT | VCE=-10V, IC=-10 mA, f=100 MHz | 100 to 300 MHz |
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1 MHz | ≤6 pF |
| Small-Signal Current Gain | hfe | VCE=-10Vdc, IC=-1.0 mAdc, f=1.0 KHz | 40 to 200 |
| Noise Figure | NF | VCE=-5.0Vdc, IC=-250µA, Rg=1.0 kΩ, f=10 Hz~15.7 kHz | ≤8.0 dB |
02 — INTRODUCTION
Features
Features
- SOT-23 high voltage transistor
- High collector-emitter voltage rating
- Wide DC current gain range
- Low saturation voltage
- Fast frequency response
03 — SOLUTIONS
Applications
CDT5551-ME SOT-23 high voltage transistor is suited for switching and amplification in high voltage tolerant, low-power electronic circuits requiring fast response and stable current gain.