sot-23 transistor

SOT-23 TRANSISTOR - CDT5401-ME

SOT-23 TRANSISTOR

Overview

  • Collector-Emitter Voltage rating
  • Collector-Base Voltage rating
  • Emitter-Base Voltage rating
  • DC current gain characteristics
  • Fast switching and frequency response
Description
01 — TECHNICAL DATA

Specifications

Characteristic Symbol Test Condition / Rating Unit
Collector-Emitter Voltage VCEO Maximum -150 Vdc
Collector-Base Voltage VCBO Maximum -160 Vdc
Emitter-Base Voltage VEBO Maximum -5.0 Vdc
Collector Current – Continuous IC Maximum -500 mAdc
Total Power Dissipation PD 225 mW
Junction and Storage Temperature Tj, Tstg -65 to +150 ℃
Thermal Resistance Junction-to-Ambient Rth j-a 556 ℃/W
Collector Cut-Off Current ICBO VCB=-120Vdc, IE=0 ≤50 nA
Emitter Cut-Off Current IEBO VEB=-4.0Vdc, IC=0 ≤50 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1.0 mAdc, IB=0 -150 Vdc
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 µA, IE=0 -160 Vdc
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 µA, IC=0 -5.0 Vdc
DC Current Gain hFE IC=-1.0 mAdc, VCE=-5.0Vdc 50
DC Current Gain hFE IC=-10 mAdc, VCE=-5.0Vdc 100 to 300
DC Current Gain hFE IC=-50 mAdc, VCE=-5.0Vdc 50
Collector-Emitter Saturation Voltage VCE(sat) IC=-10 mAdc, IB=-1.0 mAdc ≤0.2 Vdc
Collector-Emitter Saturation Voltage VCE(sat) IC=-50 mAdc, IB=-5.0 mAdc ≤0.5 Vdc
Base-Emitter Saturation Voltage VBE(sat) IC=-10 mAdc, IB=-1.0 mAdc ≤-1.0 Vdc
Base-Emitter Saturation Voltage VBE(sat) IC=-50 mAdc, IB=-5.0 mAdc ≤-1.0 Vdc
Transition Frequency fT VCE=-10V, IE=-10 mA, f=100MHz 100 to 300 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz ≤6 pF
Small-Signal Current Gain hfe VCE=-10Vdc, IC=-1.0mAdc, f=1.0 KHz 40 to 200
Noise Figure NF VCE=-5.0Vdc, IC=-250µA, Rg=1.0kΩ, f=10Hz~15.7kHz ≤8.0 dB
02 — INTRODUCTION

Features

Features

  • SOT-23 transistor
  • High voltage rating up to -150 V
  • Wide DC current gain range
  • Low saturation voltage characteristics
  • Fast transition frequency response
03 — SOLUTIONS

Applications

CDT5401-ME SOT-23 high-voltage transistor is suited for switching and amplification in circuits requiring high voltage tolerance and wide DC current gain with fast response.