n-channel mosfet
SOT-26 MOSFET - CDL8205-YE
SOT-26 N-CHANNEL MOSFET 20 V
Overview
- SOT-26 surface mount MOSFET
- N-channel enhancement mode device
- Drain-Source voltage 20 V
- Continuous drain current 6 A
- Peak drain current 20 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Type | Max | Unit |
|---|---|---|---|---|
| Drain-Source Voltage V(BR)DSS | 20 | – | – | V |
| Gate-Source Voltage VGSS | – | – | ±12 | V |
| Continuous Drain Current ID | – | – | 6 | A |
| Peak Drain Current IDM | – | – | 20 | A |
| Total Device Dissipation (FR-5 Board) | – | – | 225 | mW |
| Total Device Dissipation (Alumina Substrate) | – | – | 300 | mW |
| Junction / Storage Temperature TJ, Tstg | -55 | – | 150 | ℃ |
| Zero Gate Voltage Drain Current IDSS | – | – | 1.0 | µA |
| Gate-Body Leakage Current IGSS | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) @ ID=250 µA | 0.40 | 0.65 | 0.95 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=4.5 V, ID=4.5 A | 19 | – | 24 | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=4 V, ID=4.0 A | 21 | – | 26 | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=2.5 V, ID=3.0 A | 23 | – | 29 | mΩ |
| Forward Transconductance gfs @ VDS=15 V, ID=6 A | – | 25 | – | S |
| Diode Forward On-Voltage VSD @ VGS=0 V, IS=1.7 A | – | – | 1.2 | V |
| Turn-On Delay Time td(on) | – | 17.5 | 29.8 | ns |
| Turn-On Time tr | – | 28.5 | 38.2 | ns |
| Turn-Off Delay Time td(off) | – | 41.2 | 59.6 | ns |
| Turn-On Fall Time tf | – | 10.4 | 26.3 | ns |
| Input Capacitance Ciss @ VDS=-10 V, VGS=0 V, f=1 MHz | – | 492 | – | pF |
| Output Capacitance Coss | – | 54 | – | pF |
| Reverse Transfer Capacitance Crss | – | 7 | – | pF |
| Total Gate Charge QG @ VDS=10 V, ID=6 A, VGS=4.5 V | 7.49 | 8.50 | – | nC |
| Gate-to-Source Charge QGS | 2.48 | 2.96 | – | nC |
| Gate-to-Drain Charge QGD | 2.04 | 2.65 | – | nC |
02 — INTRODUCTION
Features
Features
SOT-26 surface mount MOSFET
N-channel enhancement mode
20 V drain-source voltage
Continuous drain current 6 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-26 N-channel MOSFET for low-voltage switching, efficient power management and high-current handling in compact surface mount circuits.