n-channel mosfet
SOT-23 MOSFET - CDL3415-ME
SOT-23 N-CHANNEL MOSFET -20 V
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode device
- Drain-Source voltage -20 V
- Continuous drain current -5.8 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS @ VGS=0 V, ID=-250 µA | -20 | – | – | V |
| Zero Gate Voltage Drain Current IDSS @ VDS=-15 V, VGS=0 V | – | – | -1.0 | µA |
| Gate-Body Leakage Current IGSS @ VGS=±12 V | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) @ ID=-250 µA | -0.50 | -0.90 | -1.30 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-4.5 V, ID=-5.0 A | – | 33 | 45 | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-2.5 V, ID=-4.0 A | – | 56 | 80 | mΩ |
| Forward Transconductance gfs @ VDS=-5 V, ID=-4 A | 7 | – | – | S |
| Diode Forward On-Voltage VSD @ VGS=0 V, IS=-4 A | – | – | 1.2 | V |
| Input Capacitance Ciss @ VDS=-10 V, VGS=0 V, f=1.0 MHz | – | 525 | – | pF |
| Output Capacitance Coss | – | 78 | – | pF |
| Reverse Transfer Capacitance Crss | – | 35 | – | pF |
| Continuous Drain Current ID | – | – | -5.8 | A |
| Peak Drain Current IDM | – | – | -15 | A |
| Total Device Dissipation PD @ TA=25℃ | – | – | 350 | mW |
| Thermal Resistance RθJA | – | – | 357 | ℃/W |
| Junction / Storage Temperature TJ, Tstg | -55 | – | 150 | ℃ |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode device
Drain-Source voltage -20 V
Continuous drain current -5.8 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET suitable for low-voltage switching and power management in compact surface mount circuits requiring high current handling and low on-resistance.