n-channel mosfet
SOT-23 MOSFET - CDL3407A-ME
SOT-23 N-CHANNEL MOSFET -30 V
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode
- Drain-Source voltage -30 V
- Continuous drain current -4.1 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Type | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS @ VGS=0 V, ID=-250 µA | -30 | – | – | V |
| Zero Gate Voltage Drain Current IDSS @ VDS=-24 V, VGS=0 V | – | – | -1 | µA |
| Gate-Body Leakage Current IGSS @ VGS=±20 V | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) @ ID=-250 µA | -1 | – | -3 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-10 V, ID=-4.1 A | – | 65 | 95 | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-4.5 V, ID=-3 A | – | 65 | 95 | mΩ |
| Forward Transconductance gfs @ VDS=-5 V, ID=-4 A | 5.5 | – | – | S |
| Diode Forward On-Voltage VSD @ VGS=0 V, IS=-1 A | – | – | -1.2 | V |
| Turn-On Delay Time td(on) | – | 8.5 | – | ns |
| Turn-On Time tr | – | 4.5 | – | ns |
| Turn-Off Delay Time td(off) | – | 26 | – | ns |
| Turn-On Fall Time tf | – | 12.5 | – | ns |
| Input Capacitance Ciss @ VDS=-6 V, VGS=0 V, f=1.0 MHz | – | 700 | – | pF |
| Output Capacitance Coss | – | 120 | – | pF |
| Reverse Transfer Capacitance Crss | – | 75 | – | pF |
| Continuous Drain Current ID | – | – | -4.1 | A |
| Total Device Dissipation PD (FR-5 Board) | – | – | 225 | mW |
| Total Device Dissipation PD (Alumina Substrate) | – | – | 300 | mW |
| Junction / Storage Temperature TJ, Tstg | -55 | – | 150 | ℃ |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode
Drain-source voltage -30 V
Continuous drain current -4.1 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET for low-voltage switching and power management in compact surface mount circuits requiring moderate current handling.