n-channel mosfet
SOT-23 MOSFET - CDL3404A-ME
SOT-23 N-CHANNEL MOSFET 30 V
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode
- Drain-Source voltage 30 V
- Continuous drain current 5.8 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Type | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS @ VGS=0 V, ID=250 µA | 30 | – | – | V |
| Zero Gate Voltage Drain Current IDSS @ VDS=24 V, VGS=0 V | – | – | 1.0 | µA |
| Gate-Body Leakage Current IGSS @ VGS=±20 V | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) @ ID=250 µA | 1 | 1.4 | 3 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=10 V, ID=5.8 A | – | 30 | 42 | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=4.5 V, ID=4.8 A | – | 30 | 42 | mΩ |
| Forward Transconductance gfs @ VDS=5 V, ID=5.8 A | 5 | – | – | S |
| Diode Forward On-Voltage VSD @ VGS=0 V, IS=1.0 A | – | – | 1 | V |
| Turn-On Delay Time td(on) | – | – | 6.5 | ns |
| Turn-On Time tr | – | 3.1 | – | ns |
| Turn-Off Delay Time td(off) | – | 15.1 | – | ns |
| Turn-On Fall Time tf | – | 2.7 | – | ns |
| Input Capacitance Ciss @ VDS=15 V, VGS=0 V, f=1.0 MHz | – | 820 | – | pF |
| Output Capacitance Coss | – | 118 | – | pF |
| Reverse Transfer Capacitance Crss | – | 85 | – | pF |
| Continuous Drain Current ID | – | – | 5.8 | A |
| Peak Drain Current IDM | – | – | 30 | A |
| Total Device Dissipation PD @ TA=25℃ | – | – | 350 | mW |
| Thermal Resistance RθJA | – | – | 357 | ℃/W |
| Junction / Storage Temperature TJ, Tstg | –55 | – | 150 | ℃ |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode
Drain-source voltage 30 V
Continuous drain current 5.8 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET for low-voltage switching, efficient power management and high-current handling in compact surface mount circuits.