n-channel mosfet
SOT-23 MOSFET - CDL3401A-ME
SOT-23 N-CHANNEL MOSFET -30 V
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode
- Drain-Source voltage -30 V
- Continuous drain current -4.2 A
- Low RDS(on) characteristics
- Gate threshold voltage approx -0.9 V
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Type | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS @ VGS=0 V, ID=-250 µA | -30 | – | – | V |
| Gate-Source Voltage VGSS | – | – | ±12 | V |
| Continuous Drain Current ID | – | – | -4.2 | A |
| Peak Drain Current IDM | – | – | -16 | A |
| Total Device Dissipation PD @ TA=25℃ | – | – | 400 | mW |
| Thermal Resistance Junction-to-Ambient RθJA | – | – | 313 | ℃/W |
| Junction / Storage Temperature TJ, Tstg | -55 | – | 150 | ℃ |
| Zero Gate Voltage Drain Current IDSS @ VDS=-24 V, VGS=0 V | – | – | -1.0 | µA |
| Gate-Body Leakage Current IGSS @ VGS=±12 V | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) @ ID=-250 µA | -0.60 | -0.90 | -1.3 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-10 V, ID=-4.2 A | – | 50 | – | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-4.5 V, ID=-4 A | – | 60 | – | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-2.5 V, ID=-4 A | – | 82 | – | mΩ |
| Forward Transconductance gfs @ VDS=-5 V, ID=-5 A | 7 | – | – | S |
| Diode Forward On-Voltage VSD @ VGS=0 V, IS=-1 A | – | 0.75 | 1.3 | V |
| Input Capacitance Ciss @ VDS=-15 V, VGS=0 V, f=1 MHz | – | 740 | – | pF |
| Output Capacitance Coss | – | 51 | – | pF |
| Reverse Transfer Capacitance Crss | – | 44 | – | pF |
| Total Gate Charge QG @ VDS=-15 V, ID=-4 A, VGS=-4.5 V | – | 7.4 | – | nC |
| Gate-to-Source Charge QGS | – | 1.3 | – | nC |
| Gate-to-Drain Charge QGD | – | 2.6 | – | nC |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode
Drain-source voltage -30 V
Continuous drain current -4.2 A
Low RDS(on) characteristics
Gate threshold voltage approx -0.9 V
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET for low-voltage switching and power management in compact surface mount circuits requiring moderate current handling.