n-channel mosfet
SOT-23 MOSFET - CDL2302D-ME
SOT-23 N-CHANNEL MOSFET
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode device
- Drain-Source voltage -20 V
- Continuous drain current -2.0 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage V(BR)DSS | -20 | V |
| Gate-Source Voltage VGSS | ±12 | V |
| Continuous Drain Current ID | -2.0 | A |
| Peak Drain Current IDM | -10 | A |
| Total Device Dissipation (FR-5 Board) | 225 | mW |
| Total Device Dissipation (Alumina Substrate) | 300 | mW |
| Junction / Storage Temperature TJ, Tstg | -55 to +150 | ℃ |
| Zero Gate Voltage Drain Current IDSS | ≤1.0 | µA |
| Gate-Body Leakage Current IGSS | ±100 | nA |
| Gate Threshold Voltage VGS(th) | 0.40–1.0 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=4.5 V | 43 | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=2.5 V | 56–85 | mΩ |
| Forward Transconductance gfs | ≥4 | S |
| Diode Forward On-Voltage VSD | ≤1.2 | V |
| Input Capacitance Ciss | ≈270 | pF |
| Output Capacitance Coss | ≈35 | pF |
| Reverse Transfer Capacitance Crss | ≈25 | pF |
| Total Gate Charge QG @ VDS=10 V, ID=2 A | ≈3.4 | nC |
| Gate-to-Source Charge QGS | ≈0.6 | nC |
| Gate-to-Drain Charge QGD | ≈1.6 | nC |
| Turn-On Delay Time td(on) | ≈2 | ns |
| Turn-On Time tr | ≈10 | ns |
| Turn-Off Delay Time td(off) | ≈8 | ns |
| Turn-On Fall Time tf | ≈3 | ns |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode device
Drain-Source voltage -20 V
Continuous drain current -2.0 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET suitable for low-voltage switching and power management in compact surface mount circuits.