n-channel mosfet
SOT-23 MOSFET - CDL2301D-ME
SOT-23 N-CHANNEL MOSFET
Overview
- SOT-23 surface mount MOSFET
- N-channel enhancement mode
- Drain-source voltage -20 V
- Continuous drain current -2.0 A
- Low RDS(on) characteristics
Description
01 — TECHNICAL DATA
Specifications
| Parameter | Min | Type | Max | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage V(BR)DSS | -20 | – | – | V |
| Zero Gate Voltage Drain Current IDSS | – | – | -1.0 | µA |
| Gate-Body Leakage Current IGSS | – | – | ±100 | nA |
| Gate Threshold Voltage VGS(th) | -0.50 | – | -1.0 | V |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-4.5 V | – | 95 | – | mΩ |
| Static Drain-Source On-State Resistance RDS(on) @ VGS=-2.5 V | – | 130 | – | mΩ |
| Diode Forward On-Voltage VSD | – | -0.8 | -1.2 | V |
| Drain Current — Continuous ID | – | – | -2.0 | A |
| Peak Drain Current IDM | – | – | -10 | A |
| Total Device Dissipation PD | – | – | 350 | mW |
| Thermal Resistance RθJA | – | – | 357 | ℃/W |
| Junction / Storage Temperature TJ, Tstg | -55 | – | 150 | ℃ |
02 — INTRODUCTION
Features
Features
SOT-23 surface mount MOSFET
N-channel enhancement mode
Drain-source voltage -20 V
Continuous drain current -2.0 A
Low RDS(on) characteristics
03 — SOLUTIONS
Applications
SOT-23 N-channel MOSFET for low voltage switching and power management in compact surface mount circuits.