PNP silicon high voltage transistor
PNP Silicon High Voltage Transistors - MMBTA92
PNP SILICON HIGH VOLTAGE TRANSISTORS FOR SWITCHING/AMPLIFIER APPLICATIONS
Overview
- PNP silicon high voltage transistors
- For high voltage switching and amplifier applications
Description
01 — TECHNICAL DATA
Specifications
| Parameter | MMBTA92 | MMBTA93 | Unit |
|---|---|---|---|
| Collector Base Voltage -VCBO | 300 | 200 | V |
| Collector Emitter Voltage -VCEO | 300 | 200 | V |
| Emitter Base Voltage -VEBO | 5 | 5 | V |
| Collector Current -IC | 500 | 500 | mA |
| Total Power Dissipation Ptot | 350 | 350 | mW |
| Junction Temperature Tj | 150 | ℃ | |
| Storage Temperature Range Tstg | -55 to +150 | ℃ | |
| DC Current Gain hFE @ -VCE = 10 V, -IC = 1 mA | 25- | 25- | (min) |
| DC Current Gain hFE @ -VCE = 10 V, -IC = 10 mA | 80-200 | 80-200 | (min-max) |
| DC Current Gain hFE @ -VCE = 10 V, -IC = 30 mA | 25- | 25- | (min) |
| Collector Base Cutoff Current -ICBO | -0.25 | -0.25 | µA |
| Emitter Base Cutoff Current -IEBO | -0.1 | -0.1 | µA |
| Collector Base Breakdown Voltage -V(BR)CBO | 300 | 200 | V |
| Collector Emitter Breakdown Voltage -V(BR)CEO | 300 | 200 | V |
| Emitter Base Breakdown Voltage -V(BR)EBO | 5 | 5 | V |
| Collector Emitter Saturation Voltage -VCE(sat) | -0.5 | V | |
| Base Emitter Saturation Voltage -VBE(sat) | -0.9 | V | |
| Current Gain Bandwidth Product fT | 50 | MHz | |
| Collector Base Capacitance Ccb | 6 | 8 | pF |
02 — INTRODUCTION
Features
Features
PNP silicon high voltage transistors
For high voltage switching and amplifier applications
03 — SOLUTIONS
Applications
High voltage PNP silicon transistors for switching and high voltage signal amplification in compact surface mount circuits.