NPN silicon epitaxial planar transistor
NPN Silicon Epitaxial Planar Transistor - BC337-BC338
NPN SILICON EPITAXIAL PLANAR TRANSISTORS FOR SWITCHING/AMPLIFIER APPLICATIONS
Overview
- For switching and amplifier applications
- Types subdivided into groups -16, -25 and -40 according to DC current gain
Description
01 — TECHNICAL DATA
Specifications
| Parameter | BC337 | BC338 | Unit |
|---|---|---|---|
| Collector Base Voltage VCBO | 50 | 30 | V |
| Collector Emitter Voltage VCEO | 45 | 25 | V |
| Emitter Base Voltage VEBO | 5 | V | |
| Collector Current IC | 800 | mA | |
| Peak Collector Current ICM | 1 | A | |
| Total Power Dissipation Ptot | 625 | mW | |
| Junction Temperature Tj | 150 | ℃ | |
| Storage Temperature Range Tstg | -55 to +150 | ℃ | |
| DC Current Gain hFE @ VCE=1 V, IC=100 mA | 100 / 160 / 250 | 60 / – / – | (groups) |
| DC Current Gain hFE @ VCE=1 V, IC=300 mA | 250 / 400 / 630 | – / – / – | (groups) |
| Collector Base Cutoff Current ICBO @ VCB | 100 | nA | |
| Collector Base Breakdown Voltage V(BR)CBO | 50 | 30 | V |
| Collector Emitter Breakdown Voltage V(BR)CEO @ IC=2 mA | 45 | 25 | V |
| Emitter Base Breakdown Voltage V(BR)EBO @ IE=100 µA | 5 | V | |
| Collector Emitter Saturation Voltage VCE(sat) @ IC=500 mA, IB=50 mA | 0.7 | V | |
| Base Emitter On Voltage VBE(on) @ VCE=1 V, IC=300 mA | 1.2 | V | |
| Gain Bandwidth Product fT @ VCE=5 V, IC=10 mA | 100 | MHz | |
| Collector Base Capacitance Ccbo @ VCB=10 V, f=1 MHz | 12 | pF | |
02 — INTRODUCTION
Features
Features
For switching and amplifier applications
These types are subdivided into three groups -16, -25 and -40 according to their DC current gain
03 — SOLUTIONS
Applications
General purpose NPN silicon epitaxial planar transistors suitable for switching and amplifier applications in control, driver and signal processing circuits.